Microelectronic Res Institute of Chinese Academy of Sciences Seeks Patent for Curved Surface Field Plate Structure Based on HEMT (High Electron Mobility Transistor) Device and Preparation Method Thereof

Press/Media

Period24 Jan 2023

Media coverage

1

Media coverage

  • TitleMicroelectronic Res Institute of Chinese Academy of Sciences Seeks Patent for Curved Surface Field Plate Structure Based on HEMT (High Electron Mobility Transistor) Device and Preparation Method Thereof
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date24/01/23
    PersonsWEI KE
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