Double-sided MEMS mirror for L-switching matrix

T. W. Yeow; K. L.E. Law; A. A. Goldenberg

doi:10.1117/12.478256

Double-sided MEMS mirror for L-switching matrix

T. W. Yeow, K. L.E. Law, A. A. Goldenberg

Faculty of Applied Sciences

University of Toronto

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

SOI wafers are finding increasing applications in MEMS devices. The device Si, buried oxide, and handle Si layers provide mechanical and structural properties to create more complex 3D free standing structures. This paper presents the fabrication process of double-sided mirror by using surface and bulk micromachining of SOI wafers. Silicon nitride thin firms are deposited on device layer of SOI to provide torsion bar material of the mirror. Device layer provides single crystal Si mechanical reinforcement to counteract the stress associated with silicon nitride. The underlying buried oxide acts as an etch-stop layer during DRIE of the Si handle layer and sacrificial layer for releasing the torsion bars. The dimensions of the mirror are 250um by 500um suspended by two torsion bars that are 350um by 6um by 0.4um.

Original language	English
Pages (from-to)	174-177
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4979
DOIs	https://doi.org/10.1117/12.478256
Publication status	Published - 2003
Event	Micromachining and Microfarication Process Technology VIII - San Jose, CA, United States Duration: 27 Jan 2003 → 29 Jan 2003

Keywords

DRIE
MEMS
MOEM
Microfabrication
Micromachining
Mirro
Optical switch
RIE
SOI

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10.1117/12.478256

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title = "Double-sided MEMS mirror for L-switching matrix",

abstract = "SOI wafers are finding increasing applications in MEMS devices. The device Si, buried oxide, and handle Si layers provide mechanical and structural properties to create more complex 3D free standing structures. This paper presents the fabrication process of double-sided mirror by using surface and bulk micromachining of SOI wafers. Silicon nitride thin firms are deposited on device layer of SOI to provide torsion bar material of the mirror. Device layer provides single crystal Si mechanical reinforcement to counteract the stress associated with silicon nitride. The underlying buried oxide acts as an etch-stop layer during DRIE of the Si handle layer and sacrificial layer for releasing the torsion bars. The dimensions of the mirror are 250um by 500um suspended by two torsion bars that are 350um by 6um by 0.4um.",

keywords = "DRIE, MEMS, MOEM, Microfabrication, Micromachining, Mirro, Optical switch, RIE, SOI",

author = "Yeow, {T. W.} and Law, {K. L.E.} and Goldenberg, {A. A.}",

year = "2003",

doi = "10.1117/12.478256",

language = "English",

volume = "4979",

pages = "174--177",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Micromachining and Microfarication Process Technology VIII ; Conference date: 27-01-2003 Through 29-01-2003",

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T1 - Double-sided MEMS mirror for L-switching matrix

AU - Yeow, T. W.

AU - Law, K. L.E.

AU - Goldenberg, A. A.

PY - 2003

Y1 - 2003

N2 - SOI wafers are finding increasing applications in MEMS devices. The device Si, buried oxide, and handle Si layers provide mechanical and structural properties to create more complex 3D free standing structures. This paper presents the fabrication process of double-sided mirror by using surface and bulk micromachining of SOI wafers. Silicon nitride thin firms are deposited on device layer of SOI to provide torsion bar material of the mirror. Device layer provides single crystal Si mechanical reinforcement to counteract the stress associated with silicon nitride. The underlying buried oxide acts as an etch-stop layer during DRIE of the Si handle layer and sacrificial layer for releasing the torsion bars. The dimensions of the mirror are 250um by 500um suspended by two torsion bars that are 350um by 6um by 0.4um.

AB - SOI wafers are finding increasing applications in MEMS devices. The device Si, buried oxide, and handle Si layers provide mechanical and structural properties to create more complex 3D free standing structures. This paper presents the fabrication process of double-sided mirror by using surface and bulk micromachining of SOI wafers. Silicon nitride thin firms are deposited on device layer of SOI to provide torsion bar material of the mirror. Device layer provides single crystal Si mechanical reinforcement to counteract the stress associated with silicon nitride. The underlying buried oxide acts as an etch-stop layer during DRIE of the Si handle layer and sacrificial layer for releasing the torsion bars. The dimensions of the mirror are 250um by 500um suspended by two torsion bars that are 350um by 6um by 0.4um.

KW - DRIE

KW - MEMS

KW - MOEM

KW - Microfabrication

KW - Micromachining

KW - Mirro

KW - Optical switch

KW - RIE

KW - SOI

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DO - 10.1117/12.478256

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AN - SCOPUS:0042564471

SN - 0277-786X

VL - 4979

SP - 174

EP - 177

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Micromachining and Microfarication Process Technology VIII

Y2 - 27 January 2003 through 29 January 2003

ER -

Double-sided MEMS mirror for L-switching matrix

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Keywords

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