Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures

Wenyan Zan, Wei Geng, Huanxiang Liu, Xiaojun Yao

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

Original languageEnglish
Pages (from-to)3159-3164
Number of pages6
JournalPhysical Chemistry Chemical Physics
Volume18
Issue number4
DOIs
Publication statusPublished - 28 Jan 2016
Externally publishedYes

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