Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature

Craig Riddet; Jeremy R. Watling; Kah Hou Chan; Evan H.C. Parker; Terence E. Whall; David R. Leadley; Asen Asenov

doi:10.1109/TED.2012.2194498

Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature

Craig Riddet, Jeremy R. Watling, Kah Hou Chan, Evan H.C. Parker, Terence E. Whall, David R. Leadley, Asen Asenov

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We present a comprehensive study of hole transport in germanium layers on "virtual" substrates using a full band Monte Carlo simulation approach, considering alternate virtual substrate and channel orientations and including the impact of the corresponding biaxial strain, doping, and lattice temperature. The superior mobility in strained germanium channels with 〈le1̄10〉le; orientation on a (110) "virtual" substrate is confirmed, and the factors leading to this enhancement are evaluated. The significant decrease in strain-and-orientation-induced mobility enhancement due to impurity scattering in doped material and at increasing lattice temperature is also demonstrated. Both factors determine how efficiently the mobility enhancement translates into transistor performance enhancement. Additionally, we shine light on the question of which factor has stronger impact in mediating the increase in mobility due to strainthe breaking of degeneracy for the heavy- and light-hole bands at the Γ point or the reduction in the density of states.

Original language	English
Article number	6196217
Pages (from-to)	1878-1884
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	7
DOIs	https://doi.org/10.1109/TED.2012.2194498
Publication status	Published - 2012
Externally published	Yes

Keywords

Germanium (Ge)
MOSFET
Monte Carlo (MC)
hole transport
k \cdot p
strain

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10.1109/TED.2012.2194498

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title = "Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature",

abstract = "We present a comprehensive study of hole transport in germanium layers on {"}virtual{"} substrates using a full band Monte Carlo simulation approach, considering alternate virtual substrate and channel orientations and including the impact of the corresponding biaxial strain, doping, and lattice temperature. The superior mobility in strained germanium channels with 〈le{\=1}10〉le; orientation on a (110) {"}virtual{"} substrate is confirmed, and the factors leading to this enhancement are evaluated. The significant decrease in strain-and-orientation-induced mobility enhancement due to impurity scattering in doped material and at increasing lattice temperature is also demonstrated. Both factors determine how efficiently the mobility enhancement translates into transistor performance enhancement. Additionally, we shine light on the question of which factor has stronger impact in mediating the increase in mobility due to strainthe breaking of degeneracy for the heavy- and light-hole bands at the Γ point or the reduction in the density of states.",

keywords = "Germanium (Ge), MOSFET, Monte Carlo (MC), hole transport, k \textbackslash{}cdot p, strain",

author = "Craig Riddet and Watling, \{Jeremy R.\} and Chan, \{Kah Hou\} and Parker, \{Evan H.C.\} and Whall, \{Terence E.\} and Leadley, \{David R.\} and Asen Asenov",

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T1 - Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature

AU - Riddet, Craig

AU - Watling, Jeremy R.

AU - Chan, Kah Hou

AU - Parker, Evan H.C.

AU - Whall, Terence E.

AU - Leadley, David R.

AU - Asenov, Asen

PY - 2012

Y1 - 2012

N2 - We present a comprehensive study of hole transport in germanium layers on "virtual" substrates using a full band Monte Carlo simulation approach, considering alternate virtual substrate and channel orientations and including the impact of the corresponding biaxial strain, doping, and lattice temperature. The superior mobility in strained germanium channels with 〈le1̄10〉le; orientation on a (110) "virtual" substrate is confirmed, and the factors leading to this enhancement are evaluated. The significant decrease in strain-and-orientation-induced mobility enhancement due to impurity scattering in doped material and at increasing lattice temperature is also demonstrated. Both factors determine how efficiently the mobility enhancement translates into transistor performance enhancement. Additionally, we shine light on the question of which factor has stronger impact in mediating the increase in mobility due to strainthe breaking of degeneracy for the heavy- and light-hole bands at the Γ point or the reduction in the density of states.

AB - We present a comprehensive study of hole transport in germanium layers on "virtual" substrates using a full band Monte Carlo simulation approach, considering alternate virtual substrate and channel orientations and including the impact of the corresponding biaxial strain, doping, and lattice temperature. The superior mobility in strained germanium channels with 〈le1̄10〉le; orientation on a (110) "virtual" substrate is confirmed, and the factors leading to this enhancement are evaluated. The significant decrease in strain-and-orientation-induced mobility enhancement due to impurity scattering in doped material and at increasing lattice temperature is also demonstrated. Both factors determine how efficiently the mobility enhancement translates into transistor performance enhancement. Additionally, we shine light on the question of which factor has stronger impact in mediating the increase in mobility due to strainthe breaking of degeneracy for the heavy- and light-hole bands at the Γ point or the reduction in the density of states.

KW - Germanium (Ge)

KW - MOSFET

KW - Monte Carlo (MC)

KW - hole transport

KW - k \cdot p

KW - strain

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DO - 10.1109/TED.2012.2194498

M3 - Article

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SN - 0018-9383

VL - 59

SP - 1878

EP - 1884

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

M1 - 6196217

ER -

Hole mobility in germanium as a function of substrate and channel orientation, strain, doping, and temperature

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Keywords

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