Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers

C. Riddet; J. R. Watling; K. H. Chan; A. Asenov; Brice De Jaeger; Jerome Mitard; Marc Meuris

doi:10.1109/IWCE.2010.5677972

Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers

C. Riddet, J. R. Watling, K. H. Chan, A. Asenov, Brice De Jaeger, Jerome Mitard, Marc Meuris

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.

Original language	English
Title of host publication	2010 14th International Workshop on Computational Electronics, IWCE 2010
Pages	239-242
Number of pages	4
DOIs	https://doi.org/10.1109/IWCE.2010.5677972
Publication status	Published - 2010
Externally published	Yes
Event	2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy Duration: 26 Oct 2010 → 29 Oct 2010

Publication series

Name	2010 14th International Workshop on Computational Electronics, IWCE 2010

Conference

Conference	2010 14th International Workshop on Computational Electronics, IWCE 2010
Country/Territory	Italy
City	Pisa
Period	26/10/10 → 29/10/10

Keywords

Full band
Germanium
High-κ
Monte Carlo
Surface roughness scattering
pMOSFET

Access to Document

10.1109/IWCE.2010.5677972

Cite this

Riddet, C., Watling, J. R., Chan, K. H., Asenov, A., De Jaeger, B., Mitard, J., & Meuris, M. (2010). Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers. In 2010 14th International Workshop on Computational Electronics, IWCE 2010 (pp. 239-242). Article 5677972 (2010 14th International Workshop on Computational Electronics, IWCE 2010). https://doi.org/10.1109/IWCE.2010.5677972

@inproceedings{82b68fe16da248ea92a3bee5fa7a8273,

title = "Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers",

abstract = "In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.",

keywords = "Full band, Germanium, High-κ, Monte Carlo, Surface roughness scattering, pMOSFET",

author = "C. Riddet and Watling, \{J. R.\} and Chan, \{K. H.\} and A. Asenov and \{De Jaeger\}, Brice and Jerome Mitard and Marc Meuris",

year = "2010",

doi = "10.1109/IWCE.2010.5677972",

language = "English",

isbn = "9781424493845",

series = "2010 14th International Workshop on Computational Electronics, IWCE 2010",

pages = "239--242",

booktitle = "2010 14th International Workshop on Computational Electronics, IWCE 2010",

note = "2010 14th International Workshop on Computational Electronics, IWCE 2010 ; Conference date: 26-10-2010 Through 29-10-2010",

}

Riddet, C, Watling, JR, Chan, KH, Asenov, A, De Jaeger, B, Mitard, J & Meuris, M 2010, Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers. in 2010 14th International Workshop on Computational Electronics, IWCE 2010., 5677972, 2010 14th International Workshop on Computational Electronics, IWCE 2010, pp. 239-242, 2010 14th International Workshop on Computational Electronics, IWCE 2010, Pisa, Italy, 26/10/10. https://doi.org/10.1109/IWCE.2010.5677972

Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers. / Riddet, C.; Watling, J. R.; Chan, K. H. et al.
2010 14th International Workshop on Computational Electronics, IWCE 2010. 2010. p. 239-242 5677972 (2010 14th International Workshop on Computational Electronics, IWCE 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers

AU - Riddet, C.

AU - Watling, J. R.

AU - Chan, K. H.

AU - Asenov, A.

AU - De Jaeger, Brice

AU - Mitard, Jerome

AU - Meuris, Marc

PY - 2010

Y1 - 2010

N2 - In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.

AB - In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.

KW - Full band

KW - Germanium

KW - High-κ

KW - Monte Carlo

KW - Surface roughness scattering

KW - pMOSFET

UR - https://www.scopus.com/pages/publications/78751681253

U2 - 10.1109/IWCE.2010.5677972

DO - 10.1109/IWCE.2010.5677972

M3 - Conference contribution

AN - SCOPUS:78751681253

SN - 9781424493845

T3 - 2010 14th International Workshop on Computational Electronics, IWCE 2010

SP - 239

EP - 242

BT - 2010 14th International Workshop on Computational Electronics, IWCE 2010

T2 - 2010 14th International Workshop on Computational Electronics, IWCE 2010

Y2 - 26 October 2010 through 29 October 2010

ER -

Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers

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