Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

K. H. Chan; B. Benbakhti; C. Riddet; J. R. Watling; A. Asenov

doi:10.1016/j.mee.2010.09.025

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

K. H. Chan, B. Benbakhti, C. Riddet, J. R. Watling, A. Asenov

University of Glasgow

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.

Original language	English
Pages (from-to)	362-365
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	4
DOIs	https://doi.org/10.1016/j.mee.2010.09.025
Publication status	Published - Apr 2011
Externally published	Yes

Keywords

Germanium
Hole
Interface state trap density
Mobility
Parasitic gate capacitance
p-MOSFET

Access to Document

10.1016/j.mee.2010.09.025

Cite this

@article{e49a74a91fcb41b5be3f15844971e054,

title = "Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET",

abstract = "In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.",

keywords = "Germanium, Hole, Interface state trap density, Mobility, Parasitic gate capacitance, p-MOSFET",

author = "Chan, {K. H.} and B. Benbakhti and C. Riddet and Watling, {J. R.} and A. Asenov",

year = "2011",

month = apr,

doi = "10.1016/j.mee.2010.09.025",

language = "English",

volume = "88",

pages = "362--365",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier BV",

number = "4",

}

TY - JOUR

T1 - Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

AU - Chan, K. H.

AU - Benbakhti, B.

AU - Riddet, C.

AU - Watling, J. R.

AU - Asenov, A.

PY - 2011/4

Y1 - 2011/4

N2 - In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.

AB - In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.

KW - Germanium

KW - Hole

KW - Interface state trap density

KW - Mobility

KW - Parasitic gate capacitance

KW - p-MOSFET

UR - http://www.scopus.com/inward/record.url?scp=79751525958&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2010.09.025

DO - 10.1016/j.mee.2010.09.025

M3 - Article

AN - SCOPUS:79751525958

SN - 0167-9317

VL - 88

SP - 362

EP - 365

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this