TY - GEN
T1 - Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width
AU - Chan, Kah Hou
AU - Benbakhti, Brahim
AU - Riddet, Craig
AU - Watling, Jeremy
AU - Asenov, Asen
PY - 2011
Y1 - 2011
N2 - The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. In this study the impact of the lateral spacer thickness on the performance of a 20 nm gate-length implant-free quantum well (IFQW) Ge pMOSFET is investigated using comprehensive full-band Monte Carlo simulations. The results of these simulations show that the narrowing of the spacer from 5 nm down to 1 nm leads to a possible ∼2.5× increase in drive current.
AB - The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. In this study the impact of the lateral spacer thickness on the performance of a 20 nm gate-length implant-free quantum well (IFQW) Ge pMOSFET is investigated using comprehensive full-band Monte Carlo simulations. The results of these simulations show that the narrowing of the spacer from 5 nm down to 1 nm leads to a possible ∼2.5× increase in drive current.
UR - https://www.scopus.com/pages/publications/79958004784
U2 - 10.1109/ULIS.2011.5757985
DO - 10.1109/ULIS.2011.5757985
M3 - Conference contribution
AN - SCOPUS:79958004784
SN - 9781457700903
T3 - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
SP - 103
EP - 106
BT - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
T2 - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Y2 - 14 March 2011 through 16 March 2011
ER -