@inproceedings{82b68fe16da248ea92a3bee5fa7a8273,
title = "Monte Carlo simulation study of hole mobility in Germanium MOS inversion layers",
abstract = "In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k·p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering. Through careful calibration and consideration of these mechanisms, good qualitative and quantitative agreement is achieved with experimental data.",
keywords = "Full band, Germanium, High-κ, Monte Carlo, Surface roughness scattering, pMOSFET",
author = "C. Riddet and Watling, \{J. R.\} and Chan, \{K. H.\} and A. Asenov and \{De Jaeger\}, Brice and Jerome Mitard and Marc Meuris",
year = "2010",
doi = "10.1109/IWCE.2010.5677972",
language = "English",
isbn = "9781424493845",
series = "2010 14th International Workshop on Computational Electronics, IWCE 2010",
pages = "239--242",
booktitle = "2010 14th International Workshop on Computational Electronics, IWCE 2010",
note = "2010 14th International Workshop on Computational Electronics, IWCE 2010 ; Conference date: 26-10-2010 Through 29-10-2010",
}