Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium

The use of alternative channel materials to maintain device performance with scaling for CMOS technology is an active area of research, with Germanium offering an extremely attractive possibility for pMOSFETs in CMOS. In this paper we use full band Monte Carlo transport simulations to investigate the impact of substrate orientation and biaxial strain on hole mobility in bulk Germanium helping to establish a preferential substrate channel orientation that can maximize carrier mobility for these devices.