Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

K. H. Chan; B. Benbakhti; C. Riddet; J. R. Watling; A. Asenov

doi:10.1016/j.mee.2010.09.025

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

K. H. Chan
, B. Benbakhti
, C. Riddet
, J. R. Watling
, A. Asenov

University of Glasgow

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.

原文	English
頁（從 - 到）	362-365
頁數	4
期刊	Microelectronic Engineering
卷	88
發行號	4
DOIs	https://doi.org/10.1016/j.mee.2010.09.025
出版狀態	Published - 4月 2011
對外發佈	是

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10.1016/j.mee.2010.09.025

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abstract = "In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.",

keywords = "Germanium, Hole, Interface state trap density, Mobility, Parasitic gate capacitance, p-MOSFET",

author = "Chan, \{K. H.\} and B. Benbakhti and C. Riddet and Watling, \{J. R.\} and A. Asenov",

year = "2011",

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AU - Chan, K. H.

AU - Benbakhti, B.

AU - Riddet, C.

AU - Watling, J. R.

AU - Asenov, A.

PY - 2011/4

Y1 - 2011/4

N2 - In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.

AB - In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.

KW - Germanium

KW - Hole

KW - Interface state trap density

KW - Mobility

KW - Parasitic gate capacitance

KW - p-MOSFET

UR - https://www.scopus.com/pages/publications/79751525958

U2 - 10.1016/j.mee.2010.09.025

DO - 10.1016/j.mee.2010.09.025

M3 - Article

AN - SCOPUS:79751525958

SN - 0167-9317

VL - 88

SP - 362

EP - 365

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4

ER -

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

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